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Miles Ashley Furman kriket al2o3 band gap přídavné jméno Přerušení Dvojznačný

Optical and Surface Studies of α-Al2O3 Powders
Optical and Surface Studies of α-Al2O3 Powders

BALD Engineering - Born in Finland, Born to ALD: Study on band-gaps of a  variety of classic ALD high-k´s via REELS
BALD Engineering - Born in Finland, Born to ALD: Study on band-gaps of a variety of classic ALD high-k´s via REELS

The stability of aluminium oxide monolayer and its interface with  two-dimensional materials | Scientific Reports
The stability of aluminium oxide monolayer and its interface with two-dimensional materials | Scientific Reports

Elucidating the high-k insulator α-Al2O3 direct/indirect energy band gap  type through density functional theory computations - ScienceDirect
Elucidating the high-k insulator α-Al2O3 direct/indirect energy band gap type through density functional theory computations - ScienceDirect

Band offset determination for amorphous Al2O3 deposited on bulk AlN and  atomic-layer epitaxial AlN on sapphire
Band offset determination for amorphous Al2O3 deposited on bulk AlN and atomic-layer epitaxial AlN on sapphire

Interpretation of the Changing the Band Gap of Al2O3 Depending on Its  Crystalline Form: Connection with Different Local Symmetri
Interpretation of the Changing the Band Gap of Al2O3 Depending on Its Crystalline Form: Connection with Different Local Symmetri

Band Offset and Electron Affinity of Monolayer MoSe2 by Internal  Photoemission
Band Offset and Electron Affinity of Monolayer MoSe2 by Internal Photoemission

Verification of Charge Transfer in Metal-Insulator-Oxide Semiconductor  Diodes via Defect Engineering of Insulator | Scientific Reports
Verification of Charge Transfer in Metal-Insulator-Oxide Semiconductor Diodes via Defect Engineering of Insulator | Scientific Reports

Band gap structure modification of amorphous anodic Al oxide film by  Ti-alloying
Band gap structure modification of amorphous anodic Al oxide film by Ti-alloying

Interpretation of the Changing the Band Gap of Al2O3 Depending on Its  Crystalline Form: Connection with Different Local Symmetries | The Journal  of Physical Chemistry C
Interpretation of the Changing the Band Gap of Al2O3 Depending on Its Crystalline Form: Connection with Different Local Symmetries | The Journal of Physical Chemistry C

Interface characterization of atomic layer deposited Al2O3 on m-plane GaN
Interface characterization of atomic layer deposited Al2O3 on m-plane GaN

JSTS - Journal of Semiconductor Technology and Science
JSTS - Journal of Semiconductor Technology and Science

Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions:  Applied Physics Letters: Vol 104, No 19
Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions: Applied Physics Letters: Vol 104, No 19

arXiv:1702.06498v1 [cond-mat.mtrl-sci] 21 Feb 2017
arXiv:1702.06498v1 [cond-mat.mtrl-sci] 21 Feb 2017

Electronic structure and bandgap of γ-Al2O3 compound using mBJ exchange  potential | SpringerLink
Electronic structure and bandgap of γ-Al2O3 compound using mBJ exchange potential | SpringerLink

Structural, electronic structure, and band alignment properties at  epitaxial NiO/Al2O3 heterojunction evaluated from synchrotron based X-ray  techniques: Journal of Applied Physics: Vol 119, No 16
Structural, electronic structure, and band alignment properties at epitaxial NiO/Al2O3 heterojunction evaluated from synchrotron based X-ray techniques: Journal of Applied Physics: Vol 119, No 16

Band alignment of Al2O3 with (-201) β-Ga2O3
Band alignment of Al2O3 with (-201) β-Ga2O3

Photochemistry of the -Al2O3-PETN Interface
Photochemistry of the -Al2O3-PETN Interface

Figure 5 from Band Gap and Band Offset of Ga2O3 and (AlxGa1−x)2O3 Alloys |  Semantic Scholar
Figure 5 from Band Gap and Band Offset of Ga2O3 and (AlxGa1−x)2O3 Alloys | Semantic Scholar

Optical Energy Gap of Ti:Al2O3 Single Crystals
Optical Energy Gap of Ti:Al2O3 Single Crystals

Structural and band alignment properties of Al2O3 on epitaxial Ge grown on  (100), (110), and (111)A GaAs substrates by molecular
Structural and band alignment properties of Al2O3 on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular

Energy-band diagram configuration of Al2O3/oxygen-terminated p-diamond  metal-oxide-semiconductor: Applied Physics Letters: Vol 107, No 14
Energy-band diagram configuration of Al2O3/oxygen-terminated p-diamond metal-oxide-semiconductor: Applied Physics Letters: Vol 107, No 14

Band diagram of the TiO2/MAPbI3 and Al2O3/MAPbI3 interfaces,... | Download  Scientific Diagram
Band diagram of the TiO2/MAPbI3 and Al2O3/MAPbI3 interfaces,... | Download Scientific Diagram

PDF] Band gap tuning of amorphous Al oxides by Zr alloying | Semantic  Scholar
PDF] Band gap tuning of amorphous Al oxides by Zr alloying | Semantic Scholar

Calculated band alignment between HfO2, Al2O3, InGaAs, and GaAs. The... |  Download Scientific Diagram
Calculated band alignment between HfO2, Al2O3, InGaAs, and GaAs. The... | Download Scientific Diagram

IETS spectrum and trap energy level within the Al2O3 band gap. (a)... |  Download Scientific Diagram
IETS spectrum and trap energy level within the Al2O3 band gap. (a)... | Download Scientific Diagram